ANÁLISE MULTIOBJETIVA DE INVERSORES TRIFÁSICOS OTIMIZADOS COM INTERRUPTORES ESTÁTICOS DE SILÍCIO E CARBETO DE SILÍCIO PARA APLICAÇÃO EM UPS

Abstract

Uninterruptible power supplies (UPS) are commonly based on silicon IGBT (Si) semiconductor technology. The 3-level topology has become one of the main alternatives in the design of UPS converters to achieve higher efficiency and better power quality. A SiC-based UPS solution becomes more attractive as an alternative to improving UPS performance at the expense of using the 3-level topology, which depends on a larger number of switches in the converter, due to the significantly reduced switching losses of SiC semiconductors. This work presents a multi-objective analysis of optimized inverters for UPS applications. A comparative study is presented with a Si-based 2-level and 3-level inverter and a SiC based 2-level topology. Different qualitative performance indicators were compared to define the optimized design.